? semiconductor components industries, llc, 2009 march, 2009 ? rev. 0 1 publication order number: NTD5804N/d NTD5804N power mosfet 40 v, 69 a, single n ? channel, dpak features ? low r ds(on) ? high current capability ? avalanche energy specified ? these are pb ? free devices applications ? ccfl backlight ? dc motor control ? class d amplifier ? power supply secondary side synchronous rectification maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 40 v gate ? to ? source voltage ? continuous v gs 20 v gate ? to ? source voltage ? non ? repetitive (t p < 10 s) v gs 30 v continuous drain current (r jc ) (note 1) steady state t c = 25 c i d 69 a t c = 100 c 49 power dissipation (r jc ) (note 1) t c = 25 c p d 71 w pulsed drain current t p = 10 s i dm 125 a operating junction and storage temperature t j , t stg ? 55 to 175 c source current (body diode) i s 30 a single pulse drain ? to ? source avalanche energy (v dd = 50 v, v gs = 10 v, r g = 25 , i l(pk) = 36 a, l = 0.3 mh, v ds = 40 v) e as 195 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance maximum ratings parameter symbol value unit junction ? to ? case (drain) r jc 2.1 c/w junction ? to ? ambient ? steady state (note 1) r ja 106 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces. dpak case 369c (surface mount) style 2 marking diagrams & pin assignment 40 v 12 m @ 5.0 v r ds(on) max i d max v (br)dss 8.5 m @ 10 v http://onsemi.com 1 2 3 4 see detailed ordering and shipping information in the package dimensions section on p age 4 of this data sheet. ordering information 1 gate 2 drain 3 source 4 drain yww 58 04ng y = year ww = work week 5804n = device code g = pb ? free package 69 a g s n ? channel mosfet d dpak case 369d (straight lead) style 2 1 2 3 4 4 drain 2 drain 1 gate 3 source yww 58 04ng
NTD5804N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 45 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 41 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 1.0 a t j = 150 c 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 3.5 v negative threshold temperature coefficient v gs(th) /t j 7.3 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 30 a 5.7 8.5 m v gs = 5 v, i d = 10 a 7.9 12 forward transconductance gfs v ds = 15 v, i d = 15 a 12 s charges, capacitances and gate resistances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 2460 2850 pf output capacitance c oss 310 400 reverse transfer capacitance c rss 215 280 total gate charge q g(tot) v gs = 10 v, v ds = 32 v, i d = 30 a 45 nc threshold gate charge q g(th) 2.8 gate ? to ? source charge q gs 10 gate ? to ? drain charge q gd 12.6 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 32 v, i d = 30 a, r g = 2.5 11.8 ns rise time t r 18.7 turn ? off delay time t d(off) 26.8 fall time t f 5.9 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.81 1.2 v t j = 150 c 0.63 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 21.7 ns charge time ta 11.9 discharge time tb 9.8 reverse recovery charge q rr 11.8 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTD5804N http://onsemi.com 3 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 50 70 80 90 6 5 4 3 2 0 50 75 figure 3. on ? resistance vs. drain current figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 10 8 7 6 5 0.005 0.009 0.011 0.013 0.015 0.017 70 30 10 50 0 0.03 0.04 0.05 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 100 75 50 25 0 ? 25 ? 50 0.7 0.8 0.9 1.2 1.3 1.4 1.6 1.8 42 32 22 12 2 10 1000 10,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 40 10 v 4.5 v v gs = 7, 6, 5.8, 5.5, 5.2, 5 v 4.0 v 3.5 v t j = 25 c 25 100 v ds 10 v t j = 25 c t j = ? 55 c t j = 100 c i d = 30 a t j = 25 c r ds(on) , drain ? to ? source resistance ( ) 0.02 0.01 v gs = 5 v t j = 25 c v gs = 10 v 125 150 175 1.0 1.1 1.5 1.7 v gs = 10 v i d = 69 a t j = 100 c t j = 150 c v gs = 0 v 60 20 40 100 0.019 0.021 49 1.9 100 0.007 60 80
NTD5804N http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge gate ? to ? source or drain ? to ? source voltage (v) q g , total gate charge (nc) 40 35 15 10 5 0 5 10 0 1000 2000 3000 0 0 5 10 15 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 1 10 1000 0.7 0.5 1.0 0.8 0.6 0.4 0 10 30 20 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) 30 20 25 t j = 25 c v gs = 0 v c iss c oss c rss 15 v ds , drain ? to ? source voltage (v) 0 15 30 45 t j = 25 c i d = 30 a v gs v ds qt v dd = 32 v i d = 30 a v gs = 10 v t d(off) t d(on) t r t j = 25 c v gs = 0 v t f vds vgs 30 45 100 0.9 4000 5000 6000 q gs q gd ordering information order number package shipping ? NTD5804Ng dpak (straight lead) (pb ? free) 75 units / rail NTD5804Nt4g dpak (pb ? free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTD5804N http://onsemi.com 5 package dimensions dpak case 369c ? 01 issue o 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ? t ? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain
NTD5804N http://onsemi.com 6 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? dpak case 369d ? 01 issue b on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTD5804N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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